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Title 

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

Authors 

C M LimI K LeeKi Joong LeeYoung Kyoung OhYong Beom ShinW J Cho

Publisher 

National Institute for Materials Science

Issue Date 

2017

Citation 

Science and Technology of Advanced Materials

Keywords 

capacitive couplingDual-gate field-effect transistorion-sensitive field-effect transistornanoimprint lithographypH sensorsilicon nanowire

Abstract 

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7?mV/pH and 439.3?mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1?mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

ISSN 

1468-6996

Link 

http://dx.doi.org/10.1080/14686996.2016.1253409

Appears in Collections

1. Journal Articles > Journal Articles

Registered Date

2019-05-02


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